PART |
Description |
Maker |
UPD166013T1J UPD166013T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
UPD166026T1K |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
TPD4142K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4135AK |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4122K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4123AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
DLX3416 |
Intelligent Display Device
|
Osram Opto Semiconductors GmbH
|
2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB POWER TRANSISTORS(3.0A/60V/30W) POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 57A条) 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFZ44VL IRFZ44VS IRFZ44VSTRR |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) (IRFZ44VL / IRFZ44VS) Power MOSFET
|
IRF[International Rectifier]
|
PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules:1200V 50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|